3TA250GKxxNB
Three Phase Thyristor Module (Half Bridge)
K3
K2
K1
K2
G2
K1
G1
K3
3
K2
2
K1
1
K2 G2
Dimensions in mm (1mm = 0.0394")
A
G3
K3
K1 G1
G3 K3
A
Type
3TA250GK03NB
3TA250GK04NB
V
RSM
V
400
500
V
RRM
V
300
400
Symbol
I
T(RMS)
I
TSM
2
It
Test Conditions
Single phase, half wave, 180
o
C conduction,T
C
=114
o
C
1/2cycle, 50Hz/60Hz, peak value, non-repetitive
Maximum Ratings
250
392
6750/7420
620000
10
1
3
10
5
Unit
A
A
A
2
s
W
A
V
A
/us
o
I
T(AV)
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
di/dt
T
VJ
T
VJM
T
stg
Ms
Mt
Weight
to heatsink M6
to terminals M6
IG=150mA, Tj=25
o
C, V
D
=1/2V
DRM
, dI
G
/dt=1A/us
60
-30...+150
150
-30...+125
3 ~ 5
2.5 ~ 5
210
C
Nm
g
3TA250GKxxNB
Three Phase Thyristor Module (Half Bridge)
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GD
tgt
dv/dt
I
H
R
thJC
Test Conditions
at V
DRM,
single phase, half wave, Tj=150
o
C
o
On-State Current
750A,
Tj=25 C Inst. measurement
min.
typ.
max.
80
80
1.25
200
Unit
mA
V
mA
V
Tj=25
o
C, I
T
=1A, V
D
=6V
Tj=150
o
C, V
D
=1/2V
DRM
I
T
=100A, I
G
=200mA, Tj=25
o
C, V
D
=1/2V
DRM
, dI
G
/dt=1A/us
o
Tj=150 C, V
D
=2/3V
DRM
, Exponential wave
0.25
10
150
150
0.09
o
us
V/us
mA
C/W
Tj=25
o
C
Junction to case (1/3 Module)
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
*
RoHS compliance
APPLICATIONS
*
Welding Machine Power Supply
* Space and weight savings
*
DC Power Supply
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
ADVANTAGES
3TA250GKxxNB
Three Phase Thyristor Module (Half Bridge)
Transient Thermal Impedance
θ
（℃/W）
j-c
０１
．
０１
．
０１
．
００
．
００
．
００
．
００
．
Allowable Case Temperature（℃）
Transient Thermal Impedance
Junction to Case
１
５
１
４
１
３
１
２
１
１
１
０
９
Case Temperature Single phase half wave）
（
Per one element
360
2
θ Conduction Angle
：
Per one element
θ
＝30゜
００
．
１
ー
０
θ
＝90゜
θ
＝60゜
θ
＝180゜
θ
＝120゜
D.C.
１
ー
０
１
ー
０
Time
t
（sec）
１
０
１
０
１
０
０
０
０
Average On-State Current A）
（
On-State Voltage max
Surge On-State Current A）
（
On-State Current A）
（
１
０
8000
7000
6000
（Non-Repetitive）
Per one element
６ Hz
０
１
０
5000
4000
3000
１
０
１
．
１
０
１
０
On-State Voltage V）
（
Time cycles）
（
４
０
（Single phase half wave）
D.C.
Gate Characteristics
Peak Gate Current ３A）
（
１
０
Power Dissipation W）
（
Gate Voltage V）
（
３
０
θ
＝120゜
θ
＝180゜
Av
er
Po
ag
e
Ga
te
we
r（
10
W）
２
０
θ
＝60゜
θ
＝30゜
θ
＝90゜
2
360
: Conduction Angle
Po
we
r（
1W
）
１
０
１
０
Per one element
Maximum Gate Voltage that will not terigger any unit
０
１
０
０
３
０
Average On-State Current A）
（
１
０
１
０
１
０
Gate Current
（mA）
